Перегляд за автором "Andrievskii, V.V."

Сортувати за: Порядок: Результатів:

  • Approximation of harmonic functions on compact sets in ℂ 
    Andrievskii, V.V. (Український математичний журнал, 1993)
    The direct theorem of the theory of approximation of harmonic functions is established in the case of functions defined on a compact set, the complement of which with respect to ℂ is a John domain.
  • Germanium quantum well with two subbands occupied: kinetic properties 
    Berkutov, I.B.; Andrievskii, V.V.; Komnik, Y.F.; Mironov, O.A. (Физика низких температур, 2017)
    Multisubband transport of the p-type Si₀.₄Ge₀.₆/Ge/Si₀.₄Ge₀.₆ heterostructure has been investigated by means of magnetotransport measurements at low temperatures and high magnetic fields. Two frequency Shubnikov–de Haas ...
  • Magnetotransport studies of SiGe-based p-type heterostructures: problems of the effective mass determination 
    Berkutov, I.B.; Andrievskii, V.V.; Komnik, Yu.F.; Kolesnichenko, Yu.A.; Morris, R.J.H.; Leadley, D.R.; Mironov, O.A. (Физика низких температур, 2012)
    The Shubnikov–de Haas oscillations method of the effective mass extraction was illustrated by the magnetotransport properties investigation of two-dimensional hole gas in Si₁₋xGex (x = 0.13, 0.36, 0.95, 0.98) QWs. We have ...
  • On conformal invariants in problems of constructive function theory on sets of the real line 
    Andrievskii, V.V. (Український математичний вісник, 2004)
    This is a survey of some recent results by the author and his collaborators in the constructive theory of functions of a real variable. The results are achieved by the application of methods and techniques of modern geometric ...
  • Overheating effect and hole-phonon interaction in SiGe heterostructures 
    Berkutov, I.B.; Andrievskii, V.V.; Komnik, Yu.F.; Myronov, M.; Mironov, O.A. (Физика низких температур, 2008)
    The effect of the charge carriers overheating in a two-dimensional (2D) hole gas in a Si1–xGex quantum well, where x = 0.13; 0.36; 0.8, 0.95, has been realized. The Shubnikov–de Haas (SdH) oscillation amplitude was used ...
  • The overheating effects in germanium quantum well with two subbands occupied 
    Berkutov, I.B.; Andrievskii, V.V.; Kolesnichenko, Yu.A.; Komnik, Yu.F.; Mironov, O.A. (Физика низких температур, 2018)
    The charge carrier overheating effect was studied in the p-type Si₀.₄Ge₀.₆/Ge/Si₀.₄Ge₀.₆ heterostructure with two subband occupy. The temperature dependences of hole-phonon relaxation time τh-ph at weak magnetic fields ...